(China (Mainland))
Product Summary
The TPCA8003-H is a kind of TOSHIBA Field Effect Transistor. It is Silicon N-Channel MOS Type (Ultra-High-Speed U-MOSIII). It features high speed switching, small gate charge and low leakage current. The typical applications include: (1)High Efficiency DC/DC Converter Applications; (2)Notebook PC Applications; (3)Portable Equipment Applications.
Parametrics
Absolute maximum ratings: (1)Drain-source voltage, VDSS: 30 V; (2)Drain-gate voltage (RGS = 20 kΩ), VDGR: 30 V; (3)Gate-source voltage, VGSS: ±20 V; (4)Drain current: DC, ID: 35 A; Pulsed, IDP: 105 A; (5)Drain power dissipation (Tc=25℃), PD: 45 W; (6)Drain power dissipation (t = 10 s), PD: 2.8 W; (7)Drain power dissipation (t = 10 s), PD: 1.6 W; (8)Single-pulse avalanche energy, EAS: 159 mJ; (9)Avalanche current, IAR: 35 A; (10)Repetitive avalanche energy (Tc=25℃), EAR: 4.5 mJ; (11)Channel temperature, Tch: 150 ℃; (12)Storage temperature range, Tstg: -55 to 150 ℃.
Features
Features: (1)Small footprint due to a small and thin package; (2)High speed switching; (3)Small gate charge: QSW = 8.4 nC (typ.); (4)Low drain-source ON-resistance: RDS (ON) = 5.1 m(typ.); (5)High forward transfer admittance: |Yfs| = 60S (typ.); (6)Low leakage current: IDSS = 10μA (max) (VDS = 30 V); (7)Enhancement mode: Vth = 1.1 to 2.3 V (VDS = 10 V, ID = 1 mA).
Diagrams
| Image | Part No | Mfg | Description |  |
Pricing (USD) |
Quantity | ||||
|---|---|---|---|---|---|---|---|---|---|---|
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 TPCA8003-H |
Other |
|
Data Sheet |
Negotiable |
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 |
TPCA8003-H(TE12L,Q |
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MOSFET N-CH 30V 35A 8-SOPA |
Data Sheet |
Negotiable |
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TPCA8003-H(TE12LQM |
Toshiba |
MOSFET PW TR N-Ch 30V 40A 45W 5.1mOhms |
Data Sheet |
Negotiable |
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